Speaker
Description
HfO2 has attracted significant attention as a promising material for next-generation semiconductor chip applications due to its high-k dielectric properties, scalable ferroelectricity, and compatibility with CMOS processing. Various defects that directly influence its electrical characteristics are difficult to identify at the atomic scale; in particular, the identification of point defects such as oxygen vacancies and complex defect configurations remains a challenging task. Therefore, establishing fingerprints corresponding to specific defect structures is of critical importance.
In this study, we employed density functional theory (DFT) calculations to investigate the electronic structure and electron energy-loss spectroscopy (EELS) spectra of selected defect structures in HfO2, and derived defect-specific fingerprints.
In this presentation, we will discuss the fingerprints of specific defects, as well as spectral features that enable differentiation according to defect type and concentration.
