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Yttria-stabilized zirconia (YSZ) is a crucial material that can be effectively serve as a buffer layer for the epitaxial growth of multifunctional oxides on silicon substrates. The YSZ buffer layer plays a key role in preventing diffusion between Si and oxide layers. Additionally, the deposition of YSZ by Pulsed laser deposition (PLD) can eliminate native oxide on the surface of Si substrates. This property enables the epitaxial growth of various oxide thin films on Si substrate. In the study, YSZ buffer layers were deposited on Si substrates under various conditions using PLD. By utilizing the deposited buffer layers, the successful epitaxial growth of BaTiO3. This result makes it possible to use BaTiO3 as an optical waveguide in quantum technology on the Si substrate.
