Speaker
Description
Interface engineering plays a pivotal role in manipulating the electrical transport and conduction mechanism of a synaptic device. [1] In this work, the impact of Ti as an interfacial layer is systematically investigated by inserting ~5 nm thin film at top, bottom, and both interfaces of a functional layer (TiO2). Interestingly, it shows that Ti layer significantly regulates the migration of oxygen ions/vacancies at both the interfaces resulting in an improved stability from 10 to 200 cycles, sustained over a longer period ~8 × 103 s. In addition, the device exhibits a stable memory in a compliance free mode. However, the gradual transition in conduction on positive bias region along with the multilevel switching under a compliance current ~0.3 - 17 mA demonstrates a typical synaptic behavior. Furthermore, the Ohmic and space charge-limited current across the various resistive states signifies the trapping/de-trapping of the oxygen ion/vacancies in the device. Besides, other key parameters of synaptic device such as paired pulse facilitation, depression, and short-term memory together with the excellent transmittance in the visible spectral range makes our device adequate for innovative transparent neuromorphic applications. [2]
