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Description
The valleys in transition metal dichalcogenide monolayers have received great attention as new degrees of freedom to encode and store information due to easy addressing using circular light. However, the valley information is easily depolarized and the resonant generation of the valley excitons must be required for achieving high degrees of valley polarization. In this work, we demonstrate the enhancement of valley polarization in end emissions of h-BN/WS2/h-BN waveguide structure under the non-resonant excitation condition at room temperature. By comparing the polarization ratio for body and end emission in h-BN/WS2/h-BN waveguide structure, we found that the successive resonant excitation of exciton via propagating waveguide modes increases the degree of valley polarization.
